參數(shù)資料
型號: 934055383112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 11/15頁
文件大?。?/td> 154K
代理商: 934055383112
2003 Feb 27
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2045
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.65 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
180
30 (PEP)
>10
>30
≤25
handbook, halfpage
050
20
0
4
8
12
16
10
20
30
40
PL (PEP) (W)
Gp
(dB)
Gp
50
0
10
20
30
40
ηD
(%)
ηD
MCD890
Fig.3
Power gain and efficiency as functions of
peak envelope load power; typical values.
Class-AB operation; VDS = 26 V; IDQ = 180 mA;
f1 = 2000 MHz; f2 = 2000.1 MHz.
相關(guān)PDF資料
PDF描述
05W18 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055384112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934055384135 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934055388112 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
934055389112 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
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