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參數(shù)資料
| 型號： | 934055384112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934055384112 |
2000 Dec 20
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1046
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in the common source broadband test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
45 (PEP)
>14
>35
≤26
CW, class-AB (1-tone)
960
26
45
>14
>46
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±20
V
ID
drain current (DC)
4.5
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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