- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24697 > 934055384112 (NXP SEMICONDUCTORS) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 934055384112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934055384112 |
2000 Dec 20
6
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1046
handbook, halfpage
04
PL (W)
ACPR
(dBc)
20
0
20
60
80
40
812
16
MLD463
200 KHz
250 KHz
400 KHz
Fig.10 EDGE 8PSK adjacent channel power as a
function of load power; typical values.
VDS = 26 V; IDQ = 300 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
handbook, halfpage
0
850
900
f (MHz)
1000
20
15
5
10
0
80
60
20
40
950
MLD464
Gp
(dB)
ηD
(%)
Gp
ηD
Fig.11 Power gain and drain efficiency as functions
of frequency; typical values.
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th ≤ 25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
handbook, halfpage
80
850
900
d3
d5
d7
f (MHz)
1000
0
20
60
40
950
MLD465
dim
(dBc)
Fig.12 Intermodulation distortion as a function of
frequency; typical values.
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th ≤ 25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934055384135 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 934055388112 | 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 934055389112 | 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 934055390112 | 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 934055395215 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934055512115 | 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R |
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。