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參數(shù)資料
| 型號： | 934055384112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934055384112 |
2000 Dec 20
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1046
handbook, halfpage
020
PL (W)
Gp
(dB)
60
20
15
5
0
10
ηD
(%)
80
60
20
0
40
MLD455
ηD
Gp
PAE
Fig.2
Power gain and drain efficiency as functions
of load power; typical values.
VDS = 26 V; IDQ = 330 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high efficiency; see tuning procedure.
handbook, halfpage
020
PL (W)
Gp
(dB)
40
80
20
15
5
0
10
60
MLD456
ηD
(%)
Gp
ηD
80
60
20
0
40
Fig.3
Power gain and drain efficiency as functions
of load power; typical values.
VDS = 26 V; IDQ = 330 mA; Th ≤ 25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure
handbook, halfpage
010
PL (PEP) (W)
Gp
(dB)
50
20
15
5
0
10
20
30
40
MLD457
ηD
(%)
(1)
(3)
(2)
ηD
80
60
20
0
40
Fig.4
Power gain and drain efficiency as functions
of peak envelope power; typical values.
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
handbook, halfpage
010
PL (PEP) (W)
d3
(dB)
50
0
20
60
80
40
20
30
40
MLD458
(1)
(2)
(3)
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
VDS = 26 V; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
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