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參數(shù)資料
| 型號： | 934055384112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934055384112 |
2000 Dec 20
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1046
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. Th =25 °C; Rth j-h = 1.87 K/W,
unless otherwise specied.
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
Tuning Procedure
For high gain and efficiency:
In CW mode (PD = 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < 15 dB, then adjust C6 and C8
for high gain until Gp > 14 dB at PL =50W.
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f1 = 960 MHz; f2 = 960.1 MHz) at PL = 45 W (PEP)
and tune first C2 and then C6 and C8 for lowest d3 (below 28 dBc).
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to
heatsink
Th =25 °C; Pdis = 97 W; note 1
1.87
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =70mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
1
A
IDSX
drain cut-off current
VGS =VGSth +9V; VDS = 10 V
12.5
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
125
nA
gfs
forward transconductance
VDS = 10 V; ID = 3.5 A
2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 3.5 A
300
m
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
46
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
37
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
1.5
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
300
45 (PEP)
>14
>35
≤26
CW, class-AB (1-tone)
960
26
300
45
>14
>46
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