參數(shù)資料
型號(hào)： 934055388112
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： SOT-115C, 7 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 29K
代理商： 934055388112
September 1994
2
Philips Semiconductors
Preliminary specication
CATV amplier module
BGY66B
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended as a reverse amplifier for
use in two-way systems.
DESCRIPTION
Hybrid high dynamic range amplifier
module designed for applications in
CATV systems with a bandwidth of
5 to 120 MHz operating with a
voltage supply of 24 V (DC).
PINNING - SOT115C
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
12 3
5 78 9
MSB004 - 2
Side view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 10 MHz
24.5
25.5
dB
Itot
total current consumption (DC)
VB = 24 V
115
135
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
60
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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