參數(shù)資料
型號(hào)： 934055388112
廠商： NXP SEMICONDUCTORS
元件分類： 放大器
英文描述： 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： SOT-115C, 7 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 29K
代理商： 934055388112
September 1994
3
Philips Semiconductors
Preliminary specication
CATV amplier module
BGY66B
CHARACTERISTICS
Bandwidth 5 to 120 MHz; VB = 24 V; Tmb =30 °C; ZS =ZL =75 .
Notes
1. fp = 55.25 MHz; Vp = 48 dBmV;
fq = 61.25 MHz; Vq = 48 dBmV;
measured at fp +fq = 116.5 MHz.
2. Measured according to DIN45004B:
fp = 111.25 MHz; Vp =Vo;
fq = 118.25 MHz; Vq =Vo 6 dB;
fr = 120.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 109.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 10 MHz
24.5
25.5
dB
SL
slope cable equivalent
0.2
+0.5
dB
FL
atness of frequency response
±0.2
dB
S11
input return losses
20
dB
S22
output return losses
20
dB
CTB
composite triple beat
14 channels at;
Vo = 48 dBmV;
measured at 67.25 MHz
66
dB
Xmod
cross modulation
14 channels at;
Vo = 48 dBmV;
measured at 67.25 MHz
54
dB
d2
second order distortion
note 1
70
dB
Vo
output voltage
dim = 60 dB; note 2
60
dBmV
F
noise gure
f = 120 MHz
5dB
Itot
total current consumption (DC)
note 3
115
135
mA
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