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參數資料
| 型號： | 934055388112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115C, 7 PIN |
| 文件頁數： | 6/8頁 |
| 文件大小： | 29K |
| 代理商： | 934055388112 |
Philips Semiconductors
BUK9523-75A; BUK9623-75A
TrenchMOS logic level FET
Product specication
Rev. 01 — 10 October 2000
6 of 15
9397 750 07582
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =46A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
49
ns
Qr
recovered charge
115
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb16
0
20
40
60
80
100
120
140
160
180
200
02
46
8
10
VDS (V)
ID
(A)
2
3
4
5
VGS = 10(V)
6
7
8
03nb15
10
15
20
25
30
35
24
68
10
VGS(V)
RDSon
(mOhm)
03nb17
10
15
20
25
30
35
40
45
50
55
60
10
30
50
70
90
110
130
150
170
ID (A)
RDSon
3.2
3.4
3.6
3.8
4
5
(mOhm)
VGS= 3 (V)
03nb25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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