參數(shù)資料
型號(hào)： 934055572412
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
封裝： PLASTIC, SPT, SC-43, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 62K
代理商： 934055572412
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use
in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
700
V
CBO
Collector-Base voltage (open emitter)
-
700
V
CEO
Collector-emitter voltage (open base)
-
400
V
I
C
Collector current (DC)
-
1.0
A
I
CM
Collector current peak value
-
2.0
A
P
tot
Total power dissipation
T
lead ≤ 25 C
-
2
W
V
CEsat
Collector-emitter saturation voltage
I
C = 0.75 A;IB = 150mA
0.24
1.0
V
h
FE
I
C = 0.75 A;VCE = 5 V
14
20
t
fi
Fall time (Inductive)
I
C = 1.0 A;IBON = 200mA
50
70
ns
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
700
V
CEO
Collector to emitter voltage (open base)
-
400
V
CBO
Collector to base voltage (open emitter)
-
700
V
I
C
Collector current (DC)
-
1.0
A
I
CM
Collector current peak value
-
2.0
A
I
B
Base current (DC)
-
0.5
A
I
BM
Base current peak value
-
1.0
A
P
tot
Total power dissipation
T
lead ≤ 25 C
-
2
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-lead
Thermal resistance
-
60
K/W
junction to lead
R
th j-a
Thermal resistance
pcb mounted; lead length = 4mm
150
-
K/W
Junction to ambient
b
c
e
32 1
September 1999
1
Rev 1.000
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