參數(shù)資料
型號: 934055572412
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
封裝: PLASTIC, SPT, SC-43, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 62K
代理商: 934055572412
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100
Fig.7. Collector-Emitter saturation voltage.
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I
C/IB = 3
Solid Lines = typ values, I
C/IB = 3
INDUCTIVE SWITCHING
Fig.9. Test circuit inductive load.
Fig.10. Switching times waveforms with inductive load.
V
CC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H
Fig.11. Inductive switching.
Fig.12. Inductive switching.
tfi = f(h
FE)
tfi = f(I
C)
0.01
0.1
1
2
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT/A
VCEsat VOLTAGE/V
IC/IB = 3
25 C
-40 C
125 C
0.01
0.1
1
2
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
IC, COLLECTOR CURRENT/A
VBEsat VOLTAGE/V
IC/IB = 3
25 C
125 C
-40 C
LB
IBon
-VBB
LC
T.U.T.
VCC
IC
IB
ICon
IBon
-IBoff
t
ts
tf
toff
10 %
90 %
246
8
10
0
25
50
75
100
125
150
175
200
225
250
275
HFE GAIN (IC/IB)
tfi (ns)
11
IC = 2A
IC = 1A
IC = 1.5A
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
25
50
75
100
125
150
175
200
225
250
275
IC COLLECTOR CURRENT /A
tfi (ns)
IC/IB = 10
IC/IB = 5
IC/IB =3
September 1999
4
Rev 1.000
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