- 您現(xiàn)在的位置：買賣IC網 > PDF目錄24699 > 934055576127 (NXP SEMICONDUCTORS) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數資料
| 型號： | 934055576127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 934055576127 |
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
PHE13009
GENERAL DESCRIPTION
The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
700
V
CBO
Collector-Base voltage (open emitter)
-
700
V
CEO
Collector-emitter voltage (open base)
-
400
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
24
A
P
tot
Total power dissipation
T
mb ≤ 25 C
-
80
W
V
CEsat
Collector-emitter saturation voltage
I
C = 5.0 A;IB = 1.0 A
0.32
1.0
V
h
FEsat
I
C = 5.0 A; VCE = 5 V
-
40
t
f
Fall time
I
C = 5.0 A; IB1 = 1.0 A
0.1
0.5
s
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
700
V
CEO
Collector to emitter voltage (open base)
-
400
V
CBO
Collector to base voltage (open emitter)
-
700
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
24
A
I
B
Base current (DC)
-
6
A
I
BM
Base current peak value
-
12
A
P
tot
Total power dissipation
T
mb ≤ 25 C
-
80
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
1.56
K/W
R
th j-a
Junction to ambient
in free air
60
-
K/W
12 3
tab
b
c
e
March 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| 934055586115 | 900 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 934055627115 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 05W5 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:16-99 |
| 934055636118 | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 934055638127 | 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復。