參數(shù)資料
型號(hào)： 934055572412
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
封裝： PLASTIC, SPT, SC-43, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 62K
代理商： 934055572412
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100
STATIC CHARACTERISTICS
T
lead = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
0.8
100
A
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
2.0
500
A
T
j = 125 C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax(400V)
-
100
A
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
0.05
100
A
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10mA;
400
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 0.75 A;IB = 0.15 A
-
0.24
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 0.75 A; IB =0.15 A
-
0.93
1.3
V
h
FE
DC current gain
I
C = 10mA; VCE = 5 V
11
20
27
h
FE
I
C = 100mA; VCE = 5 V
12.5
21
31
h
FE
I
C = 0.75 A; VCE = 5 V
9
14
20
DYNAMIC CHARACTERISTICS
T
lead = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 1.0 A; IBon = -IBoff = 200mA;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.65
0.88
s
t
s
Turn-off storage time
0.88
1.2
s
t
f
Turn-off fall time
250
338
ns
Switching times (inductive load)
I
Con = 1.0 A; IBon = 200mA; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
0.51
0.7
s
t
f
Turn-off fall time
50
70
ns
Switching times (inductive load)
I
Con = 1.0 A; IBon = 200mA; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
-
1.4
s
t
f
Turn-off fall time
-
130
ns
1 Measured with half sine-wave voltage (curve tracer).
September 1999
2
Rev 1.000
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