參數(shù)資料
型號: 934055576127
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 4/7頁
文件大?。?/td> 59K
代理商: 934055576127
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
PHE13009
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C = f (Tmb)
Fig.8. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IB); Tj=25C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat = f(IC); at IC/IB =5.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IC); at IC/IB =5.
Fig.12. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.5
0.8
3
5
7
9
12
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
IC, COLLECTOR CURRENT/A
VBEsat VOLTAGE/V
IC/IB = 3
0.01
0.05
0.1
0.5
1
2
3
5
12
2
5
10
15
20
30
50
IC/A
HFE
5V
1V
0.5
0.8
3
5
7
9
12
0
0.25
0.5
0.75
1
1.25
1.5
1.75
IC, COLLECTOR CURRENT/A
VCEsat VOLTAGE/V
IC/IB = 3
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IB/A
VCEsat/V
4A
3A
2A
1A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t p
T
P
t
D
tp
D=
March 1999
4
Rev 1.000
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