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參數(shù)資料
| 型號： | 934055576127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 934055576127 |
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
PHE13009
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
5.0
mA
T
j = 125 C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax (400V)
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 5.0 A;IB = 1.0 A
-
0.32
1.0
V
I
C = 8.0 A;IB = 1.6 A
-
2.0
V
BEsat
Base-emitter saturation voltage
I
C = 5.0 A;IB = 1.0 A
-
1.0
1.3
V
I
C = 8.0 A;IB = 1.6 A
-
1.1
1.6
V
h
FE
DC current gain
I
C = 5.0 A; VCE = 5 V
8
-
40
h
FEsat
I
C = 8.0 A; VCE = 5 V
6
-
30
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
s
Turn-off storage time
2.2
3.3
s
t
f
Turn-off fall time
0.26
0.7
s
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
1.35
2.3
s
t
f
Turn-off fall time
0.1
0.5
s
Switching times (inductive load)
I
Con = 5A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
-
3.2
s
t
f
Turn-off fall time
-
0.9
s
1 Measured with half sine-wave voltage (curve tracer).
March 1999
2
Rev 1.000
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