參數(shù)資料
型號: 934055636118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 11/15頁
文件大?。?/td> 437K
代理商: 934055636118
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 27 July 2000
5 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS =0V
Tj =25 °C30
40
V
Tj = 55 °C27
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 30 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
5.0
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =10A;
Tj =25 °C
28
50
m
VGS =5V; ID =10A;
Tj =25 °C
38
56
m
Tj = 175 °C
70
104
m
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID =10A;
13
S
Qg(tot)
total gate charge
ID = 20 A; VDS =15V;
VGS =5V; Figure 15
10
nC
Qgs
gate-source charge
2.7
nC
Qgd
gate-drain (Miller) charge
5.7
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 13
460
pF
Coss
output capacitance
143
pF
Crss
reverse transfer capacitance
107
pF
td(on)
turn-on delay time
VDD = 15 V; RD = 0.75 ;
VGS =5V; RG =10
18
ns
tr
turn-off rise time
130
ns
td(off)
turn-off delay time
22
ns
tf
turn-off fall time
45
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 10 A; VGS =0V;
0.95
1.5
V
trr
reverse recovery time
IS =10A;
dIS/dt = 100 A/s;
VGS =0V; VDS =25V
65
ns
Qr
recovered charge
75
nC
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