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參數(shù)資料
| 型號： | 934055636118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 437K |
| 代理商： | 934055636118 |
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 27 July 2000
6 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ab00
0
5
10
15
20
25
30
35
40
45
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS (V)
ID
(A)
2.8 V
Tj = 25
oC
VGS = 10V
3 V
4 V
4.5 V
2.6 V
5 V
2.4 V
03ab02
0
5
10
15
20
25
30
35
40
45
50
01
2345
678
9
10
VGS (V)
ID
(A)
VDS >ID XRDSon
Tj =25oC
175oC
03ab01
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
5
10 15 20 25 30 35 40 45 50
ID (A)
RDSon
()
VGS = 10V
Tj =25oC
5V
4.5 V
2.6 V
4V
3V
2.8V
2.4 V
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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| 05W6 | Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:16-99 |
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