參數(shù)資料
型號(hào)： 934055636118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 9/15頁(yè)
文件大小： 437K
代理商： 934055636118
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 27 July 2000
3 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 5V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Unclamped inductive load; VDD ≤ 15 V; RGS =50 ;
VGS = 5 V; starting Tj =25°C and 150°C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
T
mb
(
o
C)
(%)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
I
der
(%)
T
mb
(
o
C)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03aa99
1
10
102
110
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon =VDS/ID
1ms
tp =10 s
100 s
tp
T
P
t
T
δ =
03ab07
1
10
102
10-2
10-1
110
tp (ms)
IAS
(A)
T
j prior to avalanche = 150
oC
25oC
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