參數(shù)資料
型號(hào)： 934055636118
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 8/15頁(yè)
文件大?。?/td> 437K
代理商： 934055636118
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 02 — 27 July 2000
2 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
30
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
20
A
Ptot
total power dissipation
Tmb =25 °C
37.5
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A
28
50
m
VGS =5V; ID = 10 A
38
56
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
30
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
30
V
VGS
gate-source voltage (DC)
±15
V
VGSM
peak gate-source voltage
tp ≤ 50 s; pulsed; duty cycle = 25%
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
20
A
Tmb = 100 °C; VGS =10V; Figure 2
14
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
80
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
37.5
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
20
A
ISM
peak source (diode forward) current
Tmb =25 °C; pulsed; tp ≤ 10 s
80
A
Avalanche ruggedness limiting values
EAS
non-repetitive avalanche energy
unclamped inductive load; ID =19A;
tp = 0.2 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 5 V; starting Tj =25 °C; Figure 4
74
mJ
IAS
non-repetitive avalanche current
unclamped inductive load; VDD ≤ 15 V;
RGS =50 ; VGS =5V; Figure 4
20
A
相關(guān)PDF資料
PDF描述
934055638127 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB
934055637118 75 A, 55 V, 0.0067 ohm, N-CHANNEL, Si, POWER, MOSFET
934055640127 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB
934055639118 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
05W6 Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:16-99
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube
934056947115 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R
934056954118 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*