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參數(shù)資料
| 型號(hào)： | 934056027118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 934056027118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7640-100A
Standard level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS)
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID)
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS)
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.10. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4.6 V
Tj = 25 C
VGS = 10V
4.8 V
5 V
5.2 V
8 V
4.4 V
5.4 V
6 V
0
5
10
15
20
25
30
35
40
012345
6789
10
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
6V
8 V
4.8 V
5.2 V
5.4 V
5 V
0
10
20
30
40
50
60
70
0
1020
3040
ID/A
gfs/S
26
28
30
32
34
36
38
12345
VGS/V
RDS(ON)
Ohm
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
December 1999
4
Rev 1.000
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