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參數(shù)資料
| 型號(hào)： | 934056027118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 934056027118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7640-100A
Standard level FET
Fig.11. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.12. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.13. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.15. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.16. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
BUK759-60
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
1
2
3
4
5
6
7
8
9
10
0
10
203040
QG / nC
VGS / V
VDS = 14V
VDS = 44V
01
23
45
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
0.1
1
10
100
VDS/V
C
ap
aci
tan
c
e
/
p
F
Ciss
Coss
Crss
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
December 1999
5
Rev 1.000
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