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參數(shù)資料
| 型號： | 934056365115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 934056365115 |
2000 Dec 04
2
Philips Semiconductors
Product specication
900 MHz high linear low noise amplier
BGA2011
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
RF in
2VC
3VS
4
RF out
5, 6
GND
handbook, halfpage
Top view
MBL251
BIAS
CIRCUIT
RF in
RF out
GND
VS
VC
13
2
4
5
6
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:A5-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
3
4.5
V
IS
DC supply current
15
mA
IC
DC control current
VC =VS
0.11
mA
|s21|2
insertion power gain
in application circuit, see Fig.2;
f = 900 MHz
19
dB
NF
noise gure
IS = 15 mA; f = 900 MHz
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
4.5
V
VC
voltage on control pin
VS
V
IS
supply current
forced by DC voltage on RF input
30
mA
IC
control current
0.25
mA
Ptot
total power dissipation
Ts ≤ 100 °C
135
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
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