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參數(shù)資料
| 型號： | 934056365115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 934056365115 |
2000 Dec 04
5
Philips Semiconductors
Product specication
900 MHz high linear low noise amplier
BGA2011
handbook, halfpage
0
f (MHz)
gain
(dB)
1000
3000
30
10
20
2000
MLD481
Gmax
s21
2
Fig.3
Insertion gain (
|s21|2) and Gmax as
functions of frequency; typical values.
IC = 15 mA; VS =VC = 3 V; PD = 30 dBm; Zo =50 .
handbook, halfpage
0
01
VC (V)
gain
(dB)
3
20
15
5
10
0
IS
(mA)
IS
20
15
5
10
2
MLD482
s21
2
f = 900 MHz; VS = 3 V; PD = 30 dBm.
Fig.4
Insertion gain and supply current as
functions of control voltage; typical values.
handbook, halfpage
20
10
5
0
15
MLD483
103
102
101
IC (mA)
s21
2
(dB)
f = 900 MHz; VS = 4 V; PD = 30 dBm.
Fig.5
Insertion gain as a function of control
current; typical values.
handbook, halfpage
515
15
5
0
10
MLD484
IS (mA)
IP3out
(dBm)
IP3in
(dBm)
0
10
15
5
IP3out
IP3in
VS =VC = 3 V; PD = 30 dBm (both tones); f = 900 MHz; f = 100 kHz.
Fig.6
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
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