參數(shù)資料
型號: 934056365115
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝: PLASTIC, UMT6, SC-88, SOT-363, 6 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 77K
代理商: 934056365115
2000 Dec 04
3
Philips Semiconductors
Product specication
900 MHz high linear low noise amplier
BGA2011
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; VS =3V; IS = 15 mA; f = 900 MHz; Tj =25 °C; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction
to solder point
Ptot = 135 mW; Ts ≤ 100 °C
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
10
15
20
mA
IC
control current
0.11
mA
RLIN
return losses input
typical application; see Fig.2
11
dB
high IP3 (see Fig.2; stripline = 0 mm)
11
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
17
dB
RL OUT
return losses output
typical application; see Fig.2
11
dB
high IP3 (see Fig.2; stripline = 0 mm)
12
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
14
dB
|s21|2
insertion power gain
typical application; see Fig.2
15
dB
high IP3 (see Fig.2; stripline = 0 mm)
19
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
16
dB
NF
noise gure
typical application; see Fig.2;
IS =15mA
1.5
dB
high IP3 (see Fig.2; stripline = 0 mm)
1.6
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
1.7
dB
IP3in
input intercept point
typical application; see Fig.2
2
dBm
high IP3 (see Fig.2; stripline = 0 mm)
4
dBm
high IP3 (see Fig.2; stripline = 1.5 mm)
10
dBm
相關(guān)PDF資料
PDF描述
934056375135 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934056375112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934056381118 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934056382118 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934056383118 7000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
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