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參數(shù)資料
| 型號： | 934056398127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大小： | 300K |
| 代理商： | 934056398127 |
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
5 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS = 0 V
75
90
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
IDSS
drain-source leakage current
VGS =0V; VDS =75V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VDS =0V; VGS = ±20 V
4
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 oC
7.9
8.5
m
Tj = 175 °C
20
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDS =60V;
115
nC
Qgs
gate-source charge
21
nC
Qgd
gate-drain (Miller) charge
50
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 13
4.7
nF
Coss
output capacitance
760
pF
Crss
reverse transfer capacitance
400
pF
td(on)
turn-on delay time
VDD = 37.5 V; RD = 1.5 ;
VGS =10V; RG =10
18
ns
tr
turn-off rise time
80
ns
td(off)
turn-off delay time
170
ns
tf
turn-off fall time
100
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.8
1.2
V
trr
reverse recovery time
IS = 5 A; dIS/dt = 100 A/s;
VGS =0V; VR =30V
80
ns
Qr
recovered charge
227
nC
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