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| 型號(hào)： | 934056398127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 300K |
| 代理商： | 934056398127 |
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Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
4 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
0.65
K/W
Rth(j-amb)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
60
K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint.
50
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
03ac94
10-3
10-2
10-1
1
10-5
10-4
10-3
10-2
10-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
tp
T
P
t
T
d =
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
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