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參數(shù)資料
| 型號(hào)： | 934056398127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 300K |
| 代理商： | 934056398127 |
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
2 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
75
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
75
A
Ptot
total power dissipation
Tmb =25 °C
230
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =10V; ID = 25 A
7.9
8.5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
75
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
75
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
75
A
Tmb = 100 °C; VGS =10V;
75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
240
A
Ptot
total power dissipation
230
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+75
°C
Source-drain diode
IS
source (diode forward) current
(DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward)
current
Tmb =25 °C; pulsed; tp ≤ 10 s
240
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
tp = 0.1 ms; VDD ≤ 15 V;
RGS =50 ; VGS = 10 V; starting
360
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD ≤ 15 V; RGS =50 ;
75
A
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