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| 型號(hào)： | 934056398127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 13/14頁(yè) |
| 文件大?。?/td> | 300K |
| 代理商： | 934056398127 |
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Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
8 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °C and 175 °C; VGS =0V
ID = 75 A; VDS = 15 V and 60 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
03ac70
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
IS
(A)
V
SD
(V)
175
o
C
T
j
= 25
o
C
VGS = 0 V
!=?$'
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
102030405060708090 100
Q
G (nC)
V
GS
(V)
ID = 75 A
Tj = 25
o
C
V
DS
= 15 V
VDS = 60 V
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