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參數(shù)資料
| 型號(hào)： | 934056499112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 4 PIN |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 934056499112 |
2001 Feb 09
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF861A
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. Th =25 °C; Rth mb-h = 0.15 K/W; unless otherwise specied.
Note
1. Sync compression: input sync
≥ 33%; output sync 27% measured in an 860 MHz test circuit.
Ruggedness in class-AB operation
The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 32 V; f = 860 MHz at rated load power.
The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load
mismatch errors under the nominal power condition.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
η
D
(%)
dIm
(dBc)
G
p
(dB)
CW; class-AB
860
32
1
150
>13.5
typ. 14.5
>50
≤1
2-tone; class-AB
f1 = 860
f1 = 860.1
32
1
150 (PEP)
>14
>40
≤25
PAL BG (TV); class-AB
860
(ch 69)
32
1
> 150
typ. 170
(peak sync)
>14
>40
note 1
handbook, halfpage
400
900
12
0
4
8
500
xi
ri
zi
(
)
f (MHz)
600
700
800
MCD871
Fig.3
Input impedance as a function of frequency
(series components); typical push-pull
values.
CW, class-AB operation; VDS = 32 V; IDQ =1A;
PL = 170 W (total device); Th =25 °C.
handbook, halfpage
400
900
10
0
5
500
600
700
800
f (MHz)
ZL
(
)
MCD872
XL
RL
Fig.4
Load impedance as a function of frequency
(series components); typical push-pull
values.
CW, class-AB operation; VDS = 32 V; IDQ =1A;
PL = 170 W (total device); Th =25 °C.
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