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參數(shù)資料
| 型號(hào)： | 934056499112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 4 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 934056499112 |
2001 Feb 09
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF861A
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed to withstand abrupt load mismatch errors
Source on underside eliminates DC isolators; reducing
common mode inductance
Designed for broadband operation (UHF band)
Internal input and output matching for high gain and
optimum broadband operation.
APPLICATIONS
Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source connected to ange
5
12
4
3
Top view
MBK777
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source 860 MHz test circuit.
Note
1. Sync compression: input sync
≥ 33%; output sync 27%.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
G
p
(dB)
CW, class-AB
860
32
150
>13.5
typ. 14.5
>50
≤1
PAL BG (TV); class-AB
860 (ch 69)
32
>150
typ. 170
(peak sync)
>14
>40
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
18
A
Ptot
total power dissipation
Tmb ≤ 25 °C
318
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
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