參數(shù)資料
型號(hào)： 934056499112
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 4 PIN
文件頁(yè)數(shù)： 12/16頁(yè)
文件大?。?/td> 107K
代理商： 934056499112
2001 Feb 09
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF861A
handbook, halfpage
0
100
PL (PEP) (W)
Gp
(dB)
300
20
15
5
0
10
ηD
(%)
80
60
20
0
40
200
MLD514
ηD
Gp
Fig.5
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Th =25 °C; VDS = 32 V; IDQ =1A.
2-tone: f1 = 860 MHz (6 dB); f2 = 860.1 MHz (6 dB)
measured in an 860 MHz test circuit.
handbook, halfpage
0
100
PL (PEP) (W)
dim
(dBc)
300
0
20
60
80
40
200
MLD515
d5
d3
Fig.6
Intermodulation distortion as a function of
peak envelope output power; typical values.
Th =25 °C; VDS = 32 V; IDQ =1A.
2-tone: f1 = 860 MHz (6 dB); f2 = 860.1 MHz (6 dB)
measured in an 860 MHz test circuit.
handbook, halfpage
050
PL (W)
Gp
(dB)
250
20
15
5
0
10
100
150
200
MLD516
ηD
(%)
ηD
Gp
80
60
20
0
40
Fig.7
Power gain and drain efficiency as functions
of load power; typical values.
Th =25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 860 MHz;
measured in an 860 MHz test circuit.
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