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參數(shù)資料
| 型號(hào)： | 934056582112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 934056582112 |
2003 Feb 10
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1822-10
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:
– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim =
31 dBc at 900 MHz, 28 dBc at 2200 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (HF to 2200 MHz)
No internal matching for broadband operation.
APPLICATIONS
RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range
Broadcast drivers.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
PINNING - SOT467C
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 2200; f2 = 2200.1
26
85
10 (PEP) >11; typ. 13.5 >30; typ. 34
≤26; typ. 28
f1 = 960; f2 = 960.1
26
85
10 (PEP)
typ. 18.5
typ. 39
typ.
33
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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