參數(shù)資料
型號: 934056582112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 16/19頁
文件大小: 210K
代理商: 934056582112
2003 Feb 10
6
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1822-10
handbook, halfpage
f (GHz)
Zi
(
)
ri
xi
1.8
1.9
2.0
2.1
2.2
8
6
2
0
4
MGW648
Fig.8
Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
handbook, halfpage
f (GHz)
ZL
(
)
RL
XL
1.8
1.9
2.0
2.1
2.2
6
4
2
4
6
0
MGW649
Fig.9
Load impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
handbook, full pagewidth
MGW650
50
output
50
input
VDD
L9
L8
L7
L6
L4
C4
C3
C5
C11
C12
C7
C8
C13
C14
C15
C16
C17
C18
C19
C20
C9
L5
R1
C6
L10
C1
C2
Vgate
C10
L3
L2
L1
Fig.10 Class-AB test circuit for 2.2 GHz.
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