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參數(shù)資料
| 型號： | 934056582112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大小： | 210K |
| 代理商： | 934056582112 |
2003 Feb 10
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1822-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
drain current (DC)
2.2
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tmb =25 °C; note 1
5
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.5
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.2 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =20mA
4
5V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
1.5
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
2.8
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
40
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.75 A
0.5
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
1.2
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
13
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
11
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
0.5
pF
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