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參數(shù)資料
| 型號： | 934056582112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 934056582112 |
2003 Feb 10
9
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1822-10
APPLICATION INFORMATION 960 MHz
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.4 K/W; unless otherwise specied.
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; f = 960 MHz at rated load power.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
85
10 (PEP)
typ. 18.5
typ. 39
typ.
33
handbook, halfpage
Gp
(dB)
η
D
(%)
η
D
24
16
8
0
20
12
4
60
20
0
40
30
10
50
MGW652
08
4
121620
PL (PEP) (W)
Gp
Fig.12 Power gain and efficiency as functions of
peak envelope load power; typical values.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
handbook, halfpage
dim
(dBc)
08
4
121620
PL (PEP) (W)
0
20
60
80
40
MGW653
d3
d5
d7
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
Fig.13 Intermodulation distortion as a function of
peak envelope load power; typical values.
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