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參數(shù)資料
| 型號： | 934056617118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 296K |
| 代理商： | 934056617118 |
Philips Semiconductors
PHD20N06T
N-channel TrenchMOS transistor
Product specication
Rev. 01 — 22 February 2001
6 of 13
9397 750 07895
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 10 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s;
VGS = 10 V; VDS =30V
32
ns
Qr
recovered charge
120
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =10A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
!==="#
0
10
20
30
40
50
60
02
46
8
10
VDS (V)
ID
(A)
5.0
6.0
6.5
7.0
7.5
8.0
9.0
10
12
16
VGS (V) =
!===#
40
60
80
100
120
140
160
510
15
20
VGS (V)
RDSon
(m
)
003aaa046
40
60
80
100
120
140
160
180
0
1020
3040
50
ID (A)
RDSon
(m
)
VGS (V) =
5.5
6
6.5 78
10
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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