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參數(shù)資料
| 型號(hào)： | 934056617118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | 934056617118 |
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Philips Semiconductors
PHD20N06T
N-channel TrenchMOS transistor
Product specication
Rev. 01 — 22 February 2001
2 of 13
9397 750 07895
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
IDM is limited by chip, not package.
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
18
A
Ptot
total power dissipation
Tmb =25 °C
51
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =10A
Tj =25 °C65
77
m
Tj = 175 °C
154
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
18
A
13
A
IDM
peak drain current
73
A
Ptot
total power dissipation
51
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
18
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
73
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =6A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ;
starting T j =25 °C
36
mJ
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