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| 型號(hào)： | 934056617118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | 934056617118 |
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Philips Semiconductors
PHD20N06T
N-channel TrenchMOS transistor
Product specication
Rev. 01 — 22 February 2001
3 of 13
9397 750 07895
Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
T
mb
(
o
C)
(%)
03aa24
0
20
40
80
100
120
0
25
50
75
100
125
150
175
200
I
der
(%)
T
mb
(
o
C)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
!==="!
10-1
1
10
102
103
1
10
102
VDS (V)
ID
D.C.
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 us
100 us
tp
T
P
t
T
δ =
(A)
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