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參數(shù)資料
| 型號(hào)： | 934056617118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 296K |
| 代理商： | 934056617118 |
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Philips Semiconductors
PHD20N06T
N-channel TrenchMOS transistor
Product specication
Rev. 01 — 22 February 2001
5 of 13
9397 750 07895
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
2
34V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS = 10 V; ID =10A;
Tj =25 °C
65
77
m
Tj = 175 °C
154
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 25 A; VDD =44V;
11
nC
Qgs
gate-source charge
3
nC
Qgd
gate-drain (Miller) charge
6
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
316
422
pF
Coss
output capacitance
92
110
pF
Crss
reverse transfer capacitance
64
87
pF
td(on)
turn-on delay time
VDD =30V; RL = 1.2 ;
VGS = 10 V; RG =10 ;
10
ns
tr
rise time
50
ns
td(off)
turn-off delay time
70
ns
tf
fall time
40
ns
Ld
internal drain inductance
measured from drain lead
from package to centre of die
2.5
nH
Ls
internal source inductance
measured from source lead
from package to source bond
pad
7.5
nH
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