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參數(shù)資料
| 型號(hào)： | 934056633215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | 934056633215 |
Philips Semiconductors
SI2304DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 17 August 2001
2 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current (DC)
Tsp =25 °C; VGS =5V
1.7
A
Ptot
total power dissipation
Tsp =25 °C
0.83
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS =10V; ID = 500 mA
117
m
VGS = 4.5 V; ID = 500 mA
190
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
1.7
A
1.1
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s
7.5
A
Ptot
total power dissipation
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
0.83
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
3.3
A
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