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| 型號(hào)： | 934056633215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | 934056633215 |
Philips Semiconductors
SI2304DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 17 August 2001
3 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25°C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0
50
100
150
200
Tsp (
oC)
Pder
(%)
03aa25
0
20
40
60
80
100
120
0
50
100
150
200
Tsp (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
tp
T
P
t
T
δ =
102
ID
(A)
10
1
10-1
10-2
VDS (V)
110
102
10-1
RDSon = VDS / ID
tp = 10
s
1 ms
10 ms
100 ms
D.C.
003aaa120
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