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參數(shù)資料
| 型號： | 934056633215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | 934056633215 |
Philips Semiconductors
SI2304DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 17 August 2001
6 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
2.5
VGS (V) =
3.0
4.0
5.0
8.0
3.5
10.0
ID
(A)
4
3
2
1
0
VDS (V)
0
0.5
1.0
1.5
003aaa122
VDS > ID x RDSon
Tj = 25
oC
= 150 oC
5
4
3
2
1
0
ID
(A)
01
2
3
4
5
VGS (V)
003aaa123
3.5
5.0
8.0
10.0
RDSon
(
)
0.5
0.4
0.3
0.2
0.1
0
ID (A)
1
2
3
003aaa124
VGS (V) =
0
003aaa125
0
0.4
0.8
1.2
1.6
2.0
-60
-20
20
60
100
140
180
a
Tj (
oC)
a
R
DSon
R
DSon 25
°C
()
------------------------------
=
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