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參數(shù)資料
| 型號： | 934056633215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | 934056633215 |
Philips Semiconductors
SI2304DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 17 August 2001
5 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 A; VGS =0V
Tj =25 °C30
40
V
Tj = 55 °C27
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1.5
2
V
Tj = 150 °C
0.5
V
Tj = 55 °C
2.7
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
0.01
0.5
A
Tj = 150 °C
10
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
117
m
VGS = 4.5 V; ID = 500 mA
Tj =25 °C
190
m
Tj = 150 °C
300
m
Dynamic characteristics
gfs
forward transconductance
VDS =10V; ID = 1 A
1.4
2.5
S
Qg(tot)
total gate charge
4.6
nC
Qgs
gate-source charge
0.6
nC
Qgd
gate-drain (Miller) charge
1.35
1.83
nC
Ciss
input capacitance
147
195
pF
Coss
output capacitance
65
78
pF
Crss
reverse transfer capacitance
41
56
pF
td(on)
turn-on delay time
VDD =15V; RL =15 ; VGS =10V
46ns
tr
rise time
7.5
12
ns
td(off)
turn-off delay time
18
35
ns
tf
fall time
13
19
ns
Source-drain diode
VSD
0.7
1.2
V
trr
reverse recovery time
IS = 1 A; dIS/dt = 100 A/s; VGS =0V;
VDS =25V
69
ns
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