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參數(shù)資料
| 型號(hào)： | 934056778127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 288K |
| 代理商： | 934056778127 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
7 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS =0V;f=1MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03af46
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
Tj (C)
VGS(th)
(V)
max
min
typ
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03af44
102
103
104
105
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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