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參數(shù)資料
| 型號(hào)： | 934056778127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 288K |
| 代理商： | 934056778127 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
6 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS >ID x RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af39
0
50
100
150
200
250
300
350
400
450
0
0.5
1
1.5
2
2.5
VDS (V)
ID
(A)
2.4 V
2.6 V
Tj = 25 C
15 V
VGS = 2.2 V
2.8 V
5 V
10 V
3 V
3.4 V
3.6 V
4 V
3.2 V
03af41
0
10
20
30
40
50
60
70
80
90
100
01
23
VGS (V)
ID
(A)
VDS > ID x RDSon
175 C
Tj = 25 C
03af40
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0
100
200
300
400
500
ID (A)
RDSon
(
)
Tj = 25 C
3.4 V
3.6 V
4 V
5 V
10 V
VGS = 15 V
2.4 V 2.6 V 2.8 V 3 V
3.2 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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