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參數(shù)資料
| 型號： | 934056778127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 288K |
| 代理商： | 934056778127 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
4 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
0.65
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 package
50
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03af37
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-mb)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
T
P
t
T
δ =
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