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參數(shù)資料
| 型號(hào)： | 934056778127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 288K |
| 代理商： | 934056778127 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
2 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
75
A
Ptot
total power dissipation
Tmb =25 °C
230
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj =25 °C
2.2
2.6
m
VGS =5V; ID = 25 A; Tj =25 °C
2.45
2.9
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
25
V
VGS
gate-source voltage (DC)
±15
V
VGSM
gate-source voltage
tp ≤ 50 s; pulsed;
duty cycle 25 %; Tj ≤ 150 °C
±20
V
ID
drain current (DC)
75
A
75
A
IDM
peak drain current
400
A
Ptot
total power dissipation
230
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
400
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
ID =75A;tp = 0.1 ms; VDD =15V;
RGS =50 ; VGS = 5V; starting Tj =25 °C;
500
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD =15V;RGS =50 ; VGS =5V;
starting Tj =25 °C
75
A
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