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參數(shù)資料
| 型號： | 934057036112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 136K |
| 代理商： | 934057036112 |
2002 Aug 02
5
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
-70
-60
-50
-40
-30
0
50
100
150
P
L (PEP) (W)
d5
(dBc)
(1)
(3)
(2)
Fig.5
Fifth order intermodulation distortion as a
function of the load power at different
temperatures.
VDS =27 V;IDQ =1.1 A; f1 = 890.0 MHz; f2 =890.1 MHz
Theatsink: (1) = 40 °C
(2) = 20
°C
(3) = 80
°C
-70
-60
-50
-40
0
50
100
150
P
L (PEP) (W)
d
7
(dBc)
(1)
(3)
(2)
Fig.6
Seventh order intermodulation distortion as
a function of the load power at different
temperatures.
VDS =27 V;IDQ =1.1 A; f1 = 890.0 MHz; f2 =890.1 MHz
Theatsink: (1) = 40 °C
(2) = 20
°C
(3) = 80
°C
0
5
10
15
20
0
50
100
150
P
L (PEP) (W)
gain
(dB)
0
10
20
30
40
η
D
(%)
(1)
(2)
(4)
(3)
Fig.7
Two tone power gain and efficiency as
functions of the load power and IDQ.
VDS =27 V; f1 = 890.0 MHz; f2 =890.1 MHz.
Gain:
(1) : IDQ = 1.0 A; (2) : IDQ =1.45 A
Efficiency:
(3) : IDQ = 1.0 A; (4) : IDQ =1.45 A
-80
-60
-40
-20
0
50
100
150
P
L (PEP) (W)
d
im
(dBc)
(3)
(1)
(2)
(4)
(6)
(5)
Fig.8
Intermodulation distortion as a function of
the load power
VDS =27 V; f1 = 890.0 MHz; f2 =890.1 MHz.
IDQ =1.0 A: (1) = d3
(2) = d5
(3) = d7;
IDQ =1.3 A: (4) = d3
(5) = d5
(6) = d7;
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