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參數(shù)資料
| 型號(hào)： | 934057036112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大小： | 136K |
| 代理商： | 934057036112 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)
2002 Aug 02
7
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
-1
-0.5
0
0.5
1
1.5
2
0.85
0.9
0.95
1
f (GHz)
Z
IN
(
)
ri
xi
Fig.11 Input impedance as a function of frequency
(series components):typical values; values
compromised for different parameters
Class-AB operation; VDS =27 V; IDQ =1125 mA; PL =35 W.
-1
-0.5
0
0.5
1
1.5
2
0.85
0.9
0.95
1
f (GHz)
Z
L
(
)
RL
XL
Fig.12 Load impedance as a function of frequency
(series components); typical values; values
compromised for different parameters.
Class-AB operation; VDS =27 V; IDQ =1125 mA; PL =35 W.
Fig.13 Definition of transistor impedance.
ZIN
Z
L
DRAIN
GATE
BLF0180-180
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