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參數(shù)資料
| 型號： | 934057036112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 136K |
| 代理商： | 934057036112 |
2002 Aug 02
6
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
-75
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45
P
L (avg) (dBm)
ACPR
(dBc)
(4)
(3)
(2)
(1)
Fig.9
CDMA IS95 ACPR distortion as a function of
the average load power and IDQ.
VDS = 27 V; f = 894 MHz;
ACPR @750 kHz:
(1): IDQ =1.1 A
(2):IDQ =1.4 A;
ACPR @1.98 MHz:
(3):IDQ = 1.1 A
(4):IDQ =1.4 A
-75
-70
-65
-60
-55
-50
-45
-40
0
5
10
15
20
25
30
35
40
P
L (PEP) (W)
ACPR
(dBc)
(1)
(2)
(3)
(4)
Fig.10 CDMA IS95 ACPR distortion as a function of
the load power at different temperatures.
VDS = 27 V; f = 890 MHz; IDQ =1.1 A;
ACPR @750 kHz:
(1): Theatsink =20 °C(2): Theatsink =80 °C;
ACPR @1.98 MHz:
(3): Theatsink =20 °C(4): Theatsink =80 °C.
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