參數(shù)資料
型號: 934057036112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 8/14頁
文件大?。?/td> 136K
代理商: 934057036112
2002 Aug 02
3
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under RF operating conditions.
2.
Depends of installation.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±15
V
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-c
thermal resistance from junction to case
Th =25 °C, PL = 35 W avg, note 1
<0.42
K/W
Rth hs-j
thermal resistance from heatsink to junction
Th =25 °C, PL = 32 W avg, note 2
<0.62
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS =0; ID =3 mA
75
V
VGSth
gate-source threshold voltage
VDS =10V; ID = 300 mA
4
5V
IDSS
drain-source leakage current
VGS =0; VDS =36 V
1
A
IDSX
on-state drain current
VGS =VGS(th) +9 V; VDS =10V
45
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
1
A
gfs
forward transconductance
VDS =10V; ID =10A
9
S
RDSon
drain-source on-state resistance
VGS =9V; ID =10A
60
m
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